Development of a Megahertz High-Voltage Switching Pulse Modulator Using a SiC-JFET for an Induction Synchrotron

This paper evaluates the capability of a silicon carbide junction field-effect transistor for an induction synchrotron. The device was operated with a repetition rate of 1 MHz, a drain-source voltage of 1 kV, and a drain current of 50 A in burst mode. Based on the results, the feasibility of continu...

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Bibliographic Details
Published in:IEEE transactions on plasma science 2011-02, Vol.39 (2), p.730-736
Main Authors: Ise, Keiichi, Tanaka, Hiroshi, Takaki, Koichi, Wake, Masayoshi, Okamura, Katsuya, Takayama, Ken, Weihua Jiang
Format: Article
Language:English
Subjects:
Devices
Drains
Driver circuits
Electric currents
Electric potential
Electric resistance
Feasibility
junction field-effect transistors (JFETs)
Logic gates
Modulation
Modulators
MOSFETs
pulsed power supplies
Resistance
Resistors
Silicon carbide
silicon carbide (SiC)
Switching circuits
Synchrotrons
Temperature
Transistors
Voltage
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Summary:This paper evaluates the capability of a silicon carbide junction field-effect transistor for an induction synchrotron. The device was operated with a repetition rate of 1 MHz, a drain-source voltage of 1 kV, and a drain current of 50 A in burst mode. Based on the results, the feasibility of continuous-mode operation from the point of view of maximum junction temperature is evaluated. If the total thermal resistance is smaller than 0.7°C/W, the device has potential to be applied in an induction synchrotron.
ISSN:0093-3813
1939-9375
DOI:10.1109/TPS.2010.2090671