Wide [Formula Omitted] Embedded Asynchronous SRAM With Dual-Mode Self-Timed Technique for Dynamic Voltage Systems

Voltage-dependent timing skews in precharge and sensing activities cause functional failure and reduce the speed of asynchronous static random-access memory (SRAM).

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Bibliographic Details
Published in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2009-08, Vol.56 (8), p.1657
Main Authors: Meng-Fan Chang, Meng-Fan Chang, Sue-Meng Yang, Sue-Meng Yang, Kung-Ting Chen, Kung-Ting Chen
Format: Article
Language:English
Online Access:Get full text
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Description
Summary:Voltage-dependent timing skews in precharge and sensing activities cause functional failure and reduce the speed of asynchronous static random-access memory (SRAM).
ISSN:1549-8328
1558-0806
DOI:10.1109/TCSI.2008.2010101