Direct Analysis Technique for Long-Finger HBT by Electromagnetic and Device Co-Simulation

This paper presents a direct-analysis technique for transistors with a long-finger structure. The analysis technique is an incorporated simulation between the finite-difference time-domain electromagnetic (EM) and semiconductor device simulations. The co-simulation method can consider various EM cou...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2008-04, Vol.56 (4), p.747-754
Main Authors: Shinohara, Y., Ishikawa, R., Honjo, K.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Circuit simulation
Co-simulation
Computer simulation
Degradation
device simulation
Electric, optical and optoelectronic circuits
Electrodes
Electromagnetic analysis
Electromagnetic devices
Electronics
Exact sciences and technology
Fingers
Finite difference methods
finite difference time domain (FDTD)
Gain
Gallium arsenide
HBT
Heterojunction bipolar transistors
long-finger transistor
Mathematical models
Semiconductor devices
technology computer-aided design (TCAD)
Theoretical study. Circuits analysis and design
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Summary:This paper presents a direct-analysis technique for transistors with a long-finger structure. The analysis technique is an incorporated simulation between the finite-difference time-domain electromagnetic (EM) and semiconductor device simulations. The co-simulation method can consider various EM couplings and phase shifts on finger electrodes of transistors. The method was applied for InGaP/GaAs HBTs with various finger lengths to investigate gain degradation characteristics as a function of the finger length. As the first step, circuit simulations were done instead of a semiconductor device simulation using SPICE models of the HBT. Both large- and small-signal equivalent-circuit parameters were extracted by measurements to estimate nonlinear and linear characteristics, respectively. Using the extracted small-signal parameters, the gain degradation was estimated. The co-simulation results showed the same tendency as measurement results. Additionally, it was numerically shown that a resistive loss was mainly affected for the gain degradation from a comparison between gold and lossless electrodes.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2008.919080