Toward Nanowire Electronics

This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electr...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-11, Vol.55 (11), p.2827-2845
Main Authors: Appenzeller, J., Knoch, J., Bjork, M.T., Riel, H., Schmid, H., Riess, W.
Format: Article
Language:English
Subjects:
Devices
Drains
Electrodes
Electronics
FETs
Impact ionization
MOSFET
MOSFETs
Nanocomposites
Nanomaterials
Nanostructure
nanowire FET
nanowire growth
Nanowires
Schottky-barrier
steep slope transistors
Transistors
Transport
tunnel FET
VLS growth
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Summary:This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep turn-on characteristics, namely, NW impact ionization FETs and tunnel NW-FETs. As it turns out, NW-FETs are, to a large extent, determined by the device geometry, the dimensionality of the electronic transport, and the way of making contacts to the NW. Analytical as well as simulation results are compared with experimental data to explain the various factors impacting the electronic transport in NW-FETs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2008011