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Toward Nanowire Electronics
This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electr...
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| Published in: | IEEE transactions on electron devices 2008-11, Vol.55 (11), p.2827-2845 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c386t-975eedc4aa9b0f3769e11b484d7f2efb87949c1d2455e361a405b37e3c101e63 |
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| cites | cdi_FETCH-LOGICAL-c386t-975eedc4aa9b0f3769e11b484d7f2efb87949c1d2455e361a405b37e3c101e63 |
| container_end_page | 2845 |
| container_issue | 11 |
| container_start_page | 2827 |
| container_title | IEEE transactions on electron devices |
| container_volume | 55 |
| creator | Appenzeller, J. Knoch, J. Bjork, M.T. Riel, H. Schmid, H. Riess, W. |
| description | This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep turn-on characteristics, namely, NW impact ionization FETs and tunnel NW-FETs. As it turns out, NW-FETs are, to a large extent, determined by the device geometry, the dimensionality of the electronic transport, and the way of making contacts to the NW. Analytical as well as simulation results are compared with experimental data to explain the various factors impacting the electronic transport in NW-FETs. |
| doi_str_mv | 10.1109/TED.2008.2008011 |
| format | article |
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Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep turn-on characteristics, namely, NW impact ionization FETs and tunnel NW-FETs. As it turns out, NW-FETs are, to a large extent, determined by the device geometry, the dimensionality of the electronic transport, and the way of making contacts to the NW. 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Analytical as well as simulation results are compared with experimental data to explain the various factors impacting the electronic transport in NW-FETs.</description><subject>Devices</subject><subject>Drains</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>FETs</subject><subject>Impact ionization</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>nanowire FET</subject><subject>nanowire growth</subject><subject>Nanowires</subject><subject>Schottky-barrier</subject><subject>steep slope transistors</subject><subject>Transistors</subject><subject>Transport</subject><subject>tunnel FET</subject><subject>VLS growth</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kD1LA0EQhhdRMEZ7IU2wUJuLO7ffpcT4AUGb65e9vTm4cLmLuwnBf5-NCRYWaWYYeN5h5iHkFugEgJqnYvYyySnVv4UCnJEBCKEyI7k8JwNKQWeGaXZJrmJcpFFyng_IqOi3LlTjT9f12ybgeNaiX4e-a3y8Jhe1ayPeHPuQFK-zYvqezb_ePqbP88wzLdeZUQKx8tw5U9KaKWkQoOSaV6rOsS61Mtx4qHIuBDIJjlNRMoXMAwWUbEgeDmtXof_eYFzbZRM9tq3rsN9Eq5WgjBmhEnl_kmRcMGGMSODjSRCUokxQqfc77_6hi34TuvSv1TKdzJLABNED5EMfY8DarkKzdOHHArV7_Tbpt3vz9qg_RUaHSIOIfziXUgtp2A4PX305</recordid><startdate>20081101</startdate><enddate>20081101</enddate><creator>Appenzeller, J.</creator><creator>Knoch, J.</creator><creator>Bjork, M.T.</creator><creator>Riel, H.</creator><creator>Schmid, H.</creator><creator>Riess, W.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20081101</creationdate><title>Toward Nanowire Electronics</title><author>Appenzeller, J. ; Knoch, J. ; Bjork, M.T. ; Riel, H. ; Schmid, H. ; Riess, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c386t-975eedc4aa9b0f3769e11b484d7f2efb87949c1d2455e361a405b37e3c101e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Devices</topic><topic>Drains</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>FETs</topic><topic>Impact ionization</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>nanowire FET</topic><topic>nanowire growth</topic><topic>Nanowires</topic><topic>Schottky-barrier</topic><topic>steep slope transistors</topic><topic>Transistors</topic><topic>Transport</topic><topic>tunnel FET</topic><topic>VLS growth</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Appenzeller, J.</creatorcontrib><creatorcontrib>Knoch, J.</creatorcontrib><creatorcontrib>Bjork, M.T.</creatorcontrib><creatorcontrib>Riel, H.</creatorcontrib><creatorcontrib>Schmid, H.</creatorcontrib><creatorcontrib>Riess, W.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Appenzeller, J.</au><au>Knoch, J.</au><au>Bjork, M.T.</au><au>Riel, H.</au><au>Schmid, H.</au><au>Riess, W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Toward Nanowire Electronics</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2008-11-01</date><risdate>2008</risdate><volume>55</volume><issue>11</issue><spage>2827</spage><epage>2845</epage><pages>2827-2845</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). 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| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2827-2845 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_journals_862453964 |
| source | IEEE Xplore (Online service) |
| subjects | Devices Drains Electrodes Electronics FETs Impact ionization MOSFET MOSFETs Nanocomposites Nanomaterials Nanostructure nanowire FET nanowire growth Nanowires Schottky-barrier steep slope transistors Transistors Transport tunnel FET VLS growth |
| title | Toward Nanowire Electronics |
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