Germanium Antimonide Phase-Change Nanowires for Memory Applications

GeSb nanowires (NWs) have been grown using a vapor-liquid-solid approach for the fabrication of electrically operated phase-change random access memory device. The NWs are 40-100 nm in diameter and have approximately 90% Sb for fast crystallization. Memory devices show an on/off resistance ratio of...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-11, Vol.55 (11), p.3131-3135
Main Authors: Xuhui Sun, Bin Yu, Ng, G., Meyyappan, M., Sanghyun Ju, Janes, D.B.
Format: Article
Language:English
Subjects:
Chalcogenide
Crystallization
Data storage
Devices
Flash memory
Germanium antimonides
Memory devices
Nanostructures
nanowire
Nanowires
phase change material (PCM)
Phase change memory
Phase change random access memory
Programming
Random access memory
random access memory (RAM)
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Summary:GeSb nanowires (NWs) have been grown using a vapor-liquid-solid approach for the fabrication of electrically operated phase-change random access memory device. The NWs are 40-100 nm in diameter and have approximately 90% Sb for fast crystallization. Memory devices show an on/off resistance ratio of 10 4 , reset programming current of 0.7 mA, and set programming current of 60 nA.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2005160