Impact of Shear Strain and Quantum Confinement on (110) Channel nMOSFET With High-Stress CESL

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-10, Vol.55 (10), p.2632-2640
Main Authors: TAKASHINO, Hiroyuki, OKAGAKI, Takeshi, INOUE, Yasuo, UCHIDA, Tetsuya, HAYASHI, Takashi, TANIZAWA, Motoaki, TSUKUDA, Eiji, EIKYU, Katsumi, WAKAHARA, Shoji, ISHIKAWA, Kiyoshi, TSUCHIYA, Osamu
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2003094