Dynamic P-I and P-V Curves for Semiconductor Lasers and Modulators

In this paper, we propose the dynamic P-V curve for modulator and P-I curve for laser diode, and present a simple approach to deriving the curves from the small-signal frequency responses measured using a microwave network analyzer. The linear response range, modulation efficiency, optimal driving c...

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Bibliographic Details
Published in:Journal of lightwave technology 2008-10, Vol.26 (19), p.3369-3375
Main Authors: Zhu, Ning Hua, Hasen, Qi Qi Ge, Zhang, Hong Guang, Wen, Ji Min, Xie, Liang
Format: Article
Language:English
Subjects:
Chirp modulation
Diode lasers
Driving conditions
Dynamic tests
Dynamics
Electro-absorption modulator (EAM)
Frequency
frequency response
High speed optical techniques
laser diode
Microwaves
Modulation
Modulators
Nonlinear optics
Optical modulation
Optical saturation
Optimization
Optoelectronic devices
P-I curves
P-V curves
Semiconductor lasers
Voltage
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Description
Summary:In this paper, we propose the dynamic P-V curve for modulator and P-I curve for laser diode, and present a simple approach to deriving the curves from the small-signal frequency responses measured using a microwave network analyzer. The linear response range, modulation efficiency, optimal driving conditions at different frequency can, therefore, be determined. It is demonstrated that the large-signal performance of electro-absorption (EA) modulator and the directly modulated semiconductor lasers can be predicted from the dynamic curved surface. Experiments show a good agreement between the evaluated characteristics and the measured large-signal performance.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2008.925683