Efficiency Enhancement of Light Extraction in LED With a Nano-Porous GaP Surface

Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 times 10 8 cm -2 . Such a porous surface structure exhibits a short mean free path for the transport of visible light and enh...

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Bibliographic Details
Published in:IEEE photonics technology letters 2008-04, Vol.20 (8), p.608-610
Main Authors: Hwang, J.M., Hung, W.H., Hwang, H.L.
Format: Article
Language:English
Subjects:
Density
Dry etching
Etching
Extraction
Fabrication
Lattices
Light emitting diodes
Light scattering
Light-emitting diode (LED)
Mean free path
Nanocomposites
Nanomaterials
Nanostructure
Particle scattering
photoelectrochemical (PEC) etching
Photons
Refractive index
Rough surfaces
Substrates
surface roughening
Surface roughness
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Summary:Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 times 10 8 cm -2 . Such a porous surface structure exhibits a short mean free path for the transport of visible light and enhances photon scattering in a red AlInGaP-based light-emitting device. The efficiency of extraction of light emitted from the active layer becomes about 30%-50% greater than that without an etching treatment at a current of 20-40 mA.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.918821