Fabrication and Characterization of Coplanar Waveguides on Silicon Using a Combination of SiO and SRO

In this work, the use of silicon rich oxide (SRO) and chemical vapor deposition SiO 2 double layers as passivation films of coplanar waveguides (CPW) on high resistivity silicon (HR-Si) with an N + backside is studied. The microwave performance of the fabricated CPWs is evaluated by computing the at...

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Bibliographic Details
Published in:IEEE transactions on components and packaging technologies 2008-09, Vol.31 (3), p.678-682
Main Authors: Leal-Romero, R., Zuniga-Juarez, J.E., Zaldivar-Huerta, I.E., del Carmen Maya-Sanchez, M., Aceves-Mijares, M., Reynoso-Hernandez, J.A.
Format: Article
Language:English
Subjects:
Attenuation
Attenuation constant
Chemical vapor deposition
Conductivity
coplanar waveguide (CPW)
Coplanar waveguides
dielectric constant
Dielectric losses
Dielectrics
Microwave devices
Microwaves
Optical device fabrication
Oxides
Passivation
Semiconductor films
Short range order
Silicon
Silicon dioxide
silicon rich oxide (SRO)
traveling wave
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Summary:In this work, the use of silicon rich oxide (SRO) and chemical vapor deposition SiO 2 double layers as passivation films of coplanar waveguides (CPW) on high resistivity silicon (HR-Si) with an N + backside is studied. The microwave performance of the fabricated CPWs is evaluated by computing the attenuation loss of the devices in the 0.045-50 GHz frequency range. Experimental results show that the N + layer can be used without affecting CPW performance. Also, using a combined dielectric layer (SRO 20 /SiO 2 ), the attenuation losses are reduced compared to single dielectric layers.
ISSN:1521-3331
1557-9972
DOI:10.1109/TCAPT.2008.922005