Tapered Cavities for High-Modulation-Efficiency and Low-Distortion Semiconductor Lasers

We show that mode structure and cavity geometry in multisegment semiconductor lasers can be tailored to realize high modulation efficiencies as well as low distortion levels in directly modulated semiconductor lasers using the gain-lever effect. Compared with conventional semiconductor gain-lever la...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2007-11, Vol.43 (11), p.1083-1087
Main Authors: Rana, F., Manolatou, C., Schubert, M.F.
Format: Article
Language:English
Subjects:
Bandwidth
Distortion
Distributed feedback devices
Exact sciences and technology
Fiber lasers
Fundamental areas of phenomenology (including applications)
Harmonic distortion
Holes
Intermodulation distortion
Laser feedback
Laser modes
laser modulation
Laser noise
Lasers
Modulation
Optics
Physics
Power lasers
Quantum cascade lasers
Quantum electronics
Semiconductor lasers
Semiconductor lasers
laser diodes
Semiconductors
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Description
Summary:We show that mode structure and cavity geometry in multisegment semiconductor lasers can be tailored to realize high modulation efficiencies as well as low distortion levels in directly modulated semiconductor lasers using the gain-lever effect. Compared with conventional semiconductor gain-lever lasers, the lasers proposed here can have five times higher modulation efficiencies. The second-order harmonic and third-order two-tone intermodulation distortion levels in the proposed lasers are also significantly lower than in conventional gain-lever lasers. We also show that, in the lasers proposed here, unlike in conventional gain-lever lasers, modulation bandwidths and output power levels may not be sacrificed in order to obtain high modulation efficiencies.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2007.904461