Depletion-mode TFT made of low-temperature poly-Si

This brief reports the fabrication and characterization of a depletion-mode p-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistor (TFT). The poly-Si channel was significantly doped by B ions to make a hole-accumulation layer at zero gate voltage. The depletion-mode poly-Si...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2006-05, Vol.53 (5), p.1260-1262
Main Authors: Son, Y.D., Kyung Dong Yang, Byung Seong Bae, Jang, J., Munpyo Hong, Sung Jin Kim
Format: Article
Language:English
Subjects:
Applied sciences
Boron
Channels
Charge carrier mobility
Depletion
Depletion-mode thin-film transistor (TFT)
Drains
Electric potential
Electronics
Exact sciences and technology
FETs
Gates
polycrystalline silicon thin-film transistor (poly-Si TFT)
Semiconductor device doping
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Thin film transistors
Transistors
Voltage
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Summary:This brief reports the fabrication and characterization of a depletion-mode p-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistor (TFT). The poly-Si channel was significantly doped by B ions to make a hole-accumulation layer at zero gate voltage. The depletion-mode poly-Si TFT is normally ON-state, so that the current can flow from the source to the drain at zero gate voltage. The TFT exhibited a field-effect mobility of 60 cm/sup 2//V/spl middot/s, a threshold voltage of 18 V, an on/of current ratio of 10/sup 6/, and a gate voltage swing of 1.1 V/dec.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.872359