Promoting emitter diffusion process and optimization of vertical profiles for high-speed SiGe HBT/BiCMOS

A high-temperature anneal-resistant process, which enables high-speed SiGe HBTs to embed scaled CMOS, is optimized in SiGe BiCMOS technology. This process, called promoting emitter diffusion (PED), is based on enhanced phosphorous diffusion from poly-Si emitter electrodes at high temperature to fabr...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2006-04, Vol.53 (4), p.857-865
Main Authors: Miura, M., Shimamoto, H., Hayami, R., Kodama, A., Tominari, T., Hashimoto, T., Washio, K.
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
BiCMOS integrated circuits
communication systems
Design. Technologies. Operation analysis. Testing
Diffusion
Diffusion layers
diffusion processes
Electrodes
Electronics
Emitters (electron)
Epitaxial growth
Exact sciences and technology
Germanium alloys
Heterojunction bipolar transistors
heterojunction bipolar transistors (HBTs)
High speed
Integrated circuits
Optimization
Plastic films
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon alloys
Silicon germanides
Transistors
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Summary:A high-temperature anneal-resistant process, which enables high-speed SiGe HBTs to embed scaled CMOS, is optimized in SiGe BiCMOS technology. This process, called promoting emitter diffusion (PED), is based on enhanced phosphorous diffusion from poly-Si emitter electrodes at high temperature to fabricate thin base layers and shorten the base transit time. By investigating the dependence of high-frequency performance on diffusion temperature, as-grown base layer thickness, and Si cap thickness, the methodology for PED optimization was yielded. In addition, this PED process is effective in reducing an extrinsic base resistance due to deep boron diffusion from poly-Si base electrodes. This indicates that the PED process is very effective at improving the tradeoff relationship between cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ in self-aligned SiGe HBTs using selective epitaxial growth. As a consequence, both f/sub T/ and f/sub max/ of more than 200GHz were successfully obtained.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.871169