Subthreshold current model of FinFETs based on analytical solution of 3-D Poisson's equation

The potential variation in the channel obtained from analytical solution of three-dimensional (3-D) Poisson's equation is used to calculate the subthreshold current and threshold voltage of fin field-effect transistors with doped and undoped channels. The accuracy of the model has been verified...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2006-04, Vol.53 (4), p.737-742
Main Authors: Havaldar, D.S., Katti, G., DasGupta, N., DasGupta, A.
Format: Article
Language:English
Subjects:
Analytical model
Applied sciences
Channels
Computer simulation
Devices
Electronics
Exact sciences and technology
fin field-effect transistor (FinFET)
Mathematical analysis
Mathematical models
MOSFETs
Poisson equation
Semiconductor device modeling
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
subthreshold current
Threshold voltage
Transistors
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Summary:The potential variation in the channel obtained from analytical solution of three-dimensional (3-D) Poisson's equation is used to calculate the subthreshold current and threshold voltage of fin field-effect transistors with doped and undoped channels. The accuracy of the model has been verified by the data from 3-D numerical device simulator. The variation of subthreshold slope and threshold voltage with device geometry and doping concentration in the channel has been studied.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2006.870874