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Linearity Improvement of HBT-Based Doherty Power Amplifiers Based on a Simple Analytical Model

A simple analytical model is proposed and shown to be effective in predicting the nonlinear behavior of single-ended amplifiers, as well as Doherty amplifiers implemented with GaAs heterojunction bipolar transistors (HBTs) for handset applications. The analytical model is based on linear and nonline...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2006-12, Vol.54 (12), p.4479-4488
Main Authors: Yu Zhao, Metzger, A.G., Zampardi, P.J., Iwamoto, M., Asbeck, P.M.
Format: Article
Language:English
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Summary:A simple analytical model is proposed and shown to be effective in predicting the nonlinear behavior of single-ended amplifiers, as well as Doherty amplifiers implemented with GaAs heterojunction bipolar transistors (HBTs) for handset applications. The analytical model is based on linear and nonlinear components extracted from a vertical bipolar inter-company model for Skyworks Solutions Inc.'s InGaP/GaAs HBT devices. Equations derived from the model provide insights into effects of individual components on the gain and phase of both the single-ended and Doherty amplifiers. The model indicates that tuning the phase delay inserted in front of the auxiliary power amplifier (PA) within the Doherty can improve linearity at a high input power. The efficacy of the model is demonstrated by experimental results in which, for a Doherty PA with a tuned phase delay at the auxiliary PA side, the measured gain and phase agree with the simulation results. Furthermore, the third-order intermodulation distortion performance is improved as much as 8 dB when compared with a Doherty PA without phase delay tuning
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2006.883245