Design and performance of an InGaAs-InP single-photon avalanche diode detector

This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitt...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2006-04, Vol.42 (4), p.397-403
Main Authors: Pellegrini, S., Warburton, R.E., Tan, L.J.J., Jo Shien Ng, Krysa, A.B., Groom, K., David, J.P.R., Cova, S., Robertson, M.J., Buller, G.S.
Format: Article
Language:English
Subjects:
Absorption
Applied sciences
Avalanche breakdown
Avalanche diodes
Avalanche photodiodes
avalanche photodiodes (APDs)
Circuit testing
Counting
Detectors
Devices
Diodes
Electronics
Envelope detectors
Exact sciences and technology
Fabrication
Indium gallium arsenide
Indium phosphide
Jitter
Optoelectronic devices
photodetectors
photodiodes
Quantum electronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Wavelengths
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Description
Summary:This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2006.871067