High Power Photodiode Wafer Bonded to Si Using Au With Improved Responsivity and Output Power

High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ~18 GHz, a large-signal saturation-current of ~50 mA, and a peak responsivity of ~1 A/W. Both the responsivity and the saturation current of t...

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Bibliographic Details
Published in:IEEE photonics technology letters 2006-12, Vol.18 (23), p.2526-2528
Main Authors: Ning Li, Hao Chen, Ning Duan, Mingguo Liu, Demiguel, S., Sidhu, R., Holmes, A.L., Campbell, J.C.
Format: Article
Language:English
Subjects:
Bandwidth
Bonding
Conducting materials
Gold
Indium gallium arsenide
Indium phosphide
Indium phosphides
Microwave photonics
photodetector
Photodetectors
photodiode
Photodiodes
Power generation
Saturation
Silicon
Thermal conductivity
unitraveling-carrier photodiode
Voltage
Wafer bonding
Wafers
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Summary:High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ~18 GHz, a large-signal saturation-current of ~50 mA, and a peak responsivity of ~1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.887209