Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si1-xGex

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Bibliographic Details
Published in:IEEE transactions on electron devices 2005-04, Vol.52 (4), p.518-526
Main Authors: EL MUBAREK, H. A. W, KARUNARATNE, M, BONAR, J. M, DILLIWAY, G. D, WANG, Y, HEMMENT, P. L. F, WILLOUGHBY, A. F, ASHBURN, P
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microwave and submillimeter wave devices, electron transfer devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.844738