Analytical model and parameter extraction to account for the pad parasitics in RF-CMOS

A model which considers the pad parasitic effects when performing on-wafer S-parameter measurements on microwave devices fabricated on silicon substrates is presented. The model parameters are directly determined using a simple and analytical measurement-based method, allowing the electrical represe...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2005-07, Vol.52 (7), p.1335-1342
Main Authors: Torres-Torres, R., Murphy-Arteaga, R., Reynoso-Hernandez, J.A.
Format: Article
Language:English
Subjects:
CMOS integrated circuits
Computer simulation
Devices
Equivalent circuits
Integrated circuit modeling
Mathematical analysis
Mathematical models
Microwave integrated circuits
Microwave measurements
Microwaves
Modeling
on-wafer microwave measurements
Parameter estimation
parameter extraction
Representations
RF-CMOS
Scattering parameters
Silicon
Silicon substrates
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Summary:A model which considers the pad parasitic effects when performing on-wafer S-parameter measurements on microwave devices fabricated on silicon substrates is presented. The model parameters are directly determined using a simple and analytical measurement-based method, allowing the electrical representation of the complete test structure using an equivalent circuit. The validity of the model is verified by achieving excellent agreement between simulated and experimental data up to 55GHz. In addition, a recently reported simplified deembedding procedure is improved and compared to a conventional one to study its validity as frequency increases.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.850644