Study of reverse dark current in 4H-SiC avalanche photodiodes

• Published in: IEEE journal of quantum electronics 2005-04, Vol.41 (4), p.562-567
• Main Authors: Xiangyi Guo, Beck, A.L., Xiaowei Li, Campbell, J.C., Emerson, D., Sumakeris, J.
• Format: Article
• Language: English
• Subjects: Applied sciences; avalanche photodiode (APDs); Avalanche photodiodes; Avalanches; Breakdown; Chemical vapor deposition; Current measurement; Dark current; Electric breakdown; Electronics; Exact sciences and technology; leakage currents; Mesas; Optoelectronic devices; Oxides; passivation; Photodiodes; Photodiodes; phototransistors; photoresistors; Plasma chemistry; Plasma measurements; Plasma temperature; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Temperature measurement; Tunneling; ultraviolet; Voltage
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2005.843616

Temperature-dependent current-voltage (I-V) measurements have been used to determine the reverse dark current mechanisms in 4H-SiC avalanche photodiodes (APDs). A pn junction vertical mesa structure, passivated with SiO/sub 2/ grown by plasma enhanced chemical vapor deposition, exhibits predominate leakage current along the mesa sidewall. Similar APDs, passivated by thermal oxide, exhibit lower dark current before breakdown; however, when the temperature is higher than 146/spl deg/C, an anomalous dark current, which increases rapidly with temperature, is observed. This current component appears to be eliminated by the removal of the thermal oxide. Near breakdown, tunneling is the dominant dark current mechanism for these pn devices. APDs fabricated from a pp/sup -/n structure show reduced tunneling current. At room temperature, the dark current at 95% of breakdown voltage is 140 fA (1.8 nA/cm/sup 2/) for a 100-/spl mu/m diameter APD. At a gain of 1000, the dark current is 35 pA (0.44 /spl mu/A/cm/sup 2/).