Structural stability of In2O3 films as sensor materials

• Published in: Journal of materials science. Materials in electronics 2010-04, Vol.21 (4), p.360-363
• Main Authors: Smatko, V., Golovanov, V., Liu, C. C., Kiv, A., Fuks, D., Donchev, I., Ivanovskaya, M.
• Format: Article
• Language: English
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed matter: structure, mechanical and thermal properties; Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder; Cross-disciplinary physics: materials science; rheology; Diffusion in solids; Electromigration; Exact sciences and technology; Fractures; General equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Materials Science; Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology; Metals. Metallurgy; Optical and Electronic Materials; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations; Physics; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Transport properties of condensed matter (nonelectronic)
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-009-9921-4

A structural stability of In 2 O 3 films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In 2 O 3 films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In 2 O 3 films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In 2 O 3 films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In 2 O 3 films led to improvement of their operational parameters.