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Structural stability of In2O3 films as sensor materials
A structural stability of In 2 O 3 films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In 2 O 3 films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultane...
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| Published in: | Journal of materials science. Materials in electronics 2010-04, Vol.21 (4), p.360-363 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c275t-1f5ae24b61c1ff1af2b03ebd3299bd90f85845d02d23c4bba81be8b4815faee3 |
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| cites | cdi_FETCH-LOGICAL-c275t-1f5ae24b61c1ff1af2b03ebd3299bd90f85845d02d23c4bba81be8b4815faee3 |
| container_end_page | 363 |
| container_issue | 4 |
| container_start_page | 360 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 21 |
| creator | Smatko, V. Golovanov, V. Liu, C. C. Kiv, A. Fuks, D. Donchev, I. Ivanovskaya, M. |
| description | A structural stability of In
2
O
3
films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In
2
O
3
films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In
2
O
3
films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In
2
O
3
films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In
2
O
3
films led to improvement of their operational parameters. |
| doi_str_mv | 10.1007/s10854-009-9921-4 |
| format | article |
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2
O
3
films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In
2
O
3
films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In
2
O
3
films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In
2
O
3
films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In
2
O
3
films led to improvement of their operational parameters.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-009-9921-4</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Applied sciences ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Condensed matter: structure, mechanical and thermal properties ; Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder ; Cross-disciplinary physics: materials science; rheology ; Diffusion in solids ; Electromigration ; Exact sciences and technology ; Fractures ; General equipment and techniques ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Materials Science ; Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology ; Metals. Metallurgy ; Optical and Electronic Materials ; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations ; Physics ; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing ; Transport properties of condensed matter (nonelectronic)</subject><ispartof>Journal of materials science. Materials in electronics, 2010-04, Vol.21 (4), p.360-363</ispartof><rights>Springer Science+Business Media, LLC 2009</rights><rights>2015 INIST-CNRS</rights><rights>Springer Science+Business Media, LLC 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c275t-1f5ae24b61c1ff1af2b03ebd3299bd90f85845d02d23c4bba81be8b4815faee3</citedby><cites>FETCH-LOGICAL-c275t-1f5ae24b61c1ff1af2b03ebd3299bd90f85845d02d23c4bba81be8b4815faee3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22585906$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Smatko, V.</creatorcontrib><creatorcontrib>Golovanov, V.</creatorcontrib><creatorcontrib>Liu, C. C.</creatorcontrib><creatorcontrib>Kiv, A.</creatorcontrib><creatorcontrib>Fuks, D.</creatorcontrib><creatorcontrib>Donchev, I.</creatorcontrib><creatorcontrib>Ivanovskaya, M.</creatorcontrib><title>Structural stability of In2O3 films as sensor materials</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>A structural stability of In
2
O
3
films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In
2
O
3
films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In
2
O
3
films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In
2
O
3
films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In
2
O
3
films led to improvement of their operational parameters.</description><subject>Applied sciences</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diffusion in solids</subject><subject>Electromigration</subject><subject>Exact sciences and technology</subject><subject>Fractures</subject><subject>General equipment and techniques</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Materials Science</subject><subject>Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology</subject><subject>Metals. Metallurgy</subject><subject>Optical and Electronic Materials</subject><subject>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</subject><subject>Physics</subject><subject>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</subject><subject>Transport properties of condensed matter (nonelectronic)</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kD1PwzAQhi0EEqXwA9giJEbDnWMn9ogqPipV6kAHNstObJQqTYovGfrvSVUEE9MN97zvnR7GbhEeEKB8JAStJAcw3BiBXJ6xGaoy51KLj3M2A6NKLpUQl-yKaAsAhcz1jJXvQxqrYUyuzWhwvmmb4ZD1MVt2Yp1nsWl3lDnKKHTUp2znhpAa19I1u4jTCDc_c842L8-bxRtfrV-Xi6cVr0SpBo5RuSCkL7DCGNFF4SEPvs6FMb42ELXSUtUgapFX0nun0QftpUYVXQj5nN2davep_xoDDXbbj6mbLlpdokJZIEwQnqAq9UQpRLtPzc6lg0WwRzv2ZMdOduzRjpVT5v6n2FHl2phcVzX0GxRCaWWgmDhx4mhadZ8h_T3wf_k3acZ0JQ</recordid><startdate>20100401</startdate><enddate>20100401</enddate><creator>Smatko, V.</creator><creator>Golovanov, V.</creator><creator>Liu, C. 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C. ; Kiv, A. ; Fuks, D. ; Donchev, I. ; Ivanovskaya, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c275t-1f5ae24b61c1ff1af2b03ebd3299bd90f85845d02d23c4bba81be8b4815faee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Diffusion in solids</topic><topic>Electromigration</topic><topic>Exact sciences and technology</topic><topic>Fractures</topic><topic>General equipment and techniques</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Materials Science</topic><topic>Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology</topic><topic>Metals. Metallurgy</topic><topic>Optical and Electronic Materials</topic><topic>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</topic><topic>Physics</topic><topic>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</topic><topic>Transport properties of condensed matter (nonelectronic)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Smatko, V.</creatorcontrib><creatorcontrib>Golovanov, V.</creatorcontrib><creatorcontrib>Liu, C. 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Smatko, V.</au><au>Golovanov, V.</au><au>Liu, C. C.</au><au>Kiv, A.</au><au>Fuks, D.</au><au>Donchev, I.</au><au>Ivanovskaya, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural stability of In2O3 films as sensor materials</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2010-04-01</date><risdate>2010</risdate><volume>21</volume><issue>4</issue><spage>360</spage><epage>363</epage><pages>360-363</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>A structural stability of In
2
O
3
films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In
2
O
3
films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In
2
O
3
films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In
2
O
3
films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In
2
O
3
films led to improvement of their operational parameters.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10854-009-9921-4</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2010-04, Vol.21 (4), p.360-363 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_871514610 |
| source | Springer Nature |
| subjects | Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder Cross-disciplinary physics: materials science rheology Diffusion in solids Electromigration Exact sciences and technology Fractures General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Materials Science Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology Metals. Metallurgy Optical and Electronic Materials Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Physics Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Transport properties of condensed matter (nonelectronic) |
| title | Structural stability of In2O3 films as sensor materials |
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