A study on the characteristics of hydrated La2O3 thin films with different oxidation gases on the various annealing temperature

In order to investigate the structural and electrical properties of La 2 O 3 films deposited by O 2 and O 3 , films were hydrated in DI-water and annealed at 600 and 900 °C. La 2 O 3 films deposited by O 3 showed better hydration resistance than those deposited by O 2 . The thickness of both hydrate...

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Bibliographic Details
Published in:Journal of electroceramics 2009-10, Vol.23 (2-4), p.258-261
Main Authors: Kim, Hyo June, Jun, Jin Hyung, Choi, Doo Jin
Format: Article
Language:English
Subjects:
Annealing
Ceramics
Characterization and Evaluation of Materials
Chemistry and Materials Science
Composites
Crystallography and Scattering Methods
Electrochemistry
Glass
Materials Science
Natural Materials
Optical and Electronic Materials
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Summary:In order to investigate the structural and electrical properties of La 2 O 3 films deposited by O 2 and O 3 , films were hydrated in DI-water and annealed at 600 and 900 °C. La 2 O 3 films deposited by O 3 showed better hydration resistance than those deposited by O 2 . The thickness of both hydrated films decreased after annealing at 600 °C and increased after annealing at 900 °C. The dielectric constants of the La 2 O 3 films deposited by O 3 were greater than films deposited by O 2 after annealing at 600 °C and slightly less after annealing at 900 °C. The leakage current density of the La 2 O 3 films deposited by O 3 was lower than those by O 2 after annealing at 900 °C. To this end, La 2 O 3 films deposited by O 3 showed better dissolution resistance than O 2 for hydration experiment as a function of dipping time.
ISSN:1385-3449
1573-8663
DOI:10.1007/s10832-008-9415-4