Characterisation of n-type [gamma]-CuCl on Si for UV optoelectronic applications

• Published in: Journal of materials science. Materials in electronics 2007-10, Vol.18, p.57
• Main Authors: O'reilly, L, Mitra, A, Lucas, F O, Natarajan, Gomathi, Mcnally, P J, Daniels, S, Lankinen, A, Lowney, D, Bradley, A L, Cameron, D C
• Format: Article
• Language: English
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-007-9173-0

Issue Title: Proceedings of the International Conference on Optical and Optoelectronic Properties of Materials and Applications (ICOOPMA 2006) Guest Editors: Jai Singh, Takeshi Aoki, Koichi Shimakawa and Harry Ruda The use of co-evaporation of ZnCl^sub 2^ with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current-voltage (IV) characteristics in the range of ±4 V have been measured using Cu-Au electrical contacts. Room temperature Hall effect measurements show some evidence of a mixed conduction mechanism. On average the samples exhibit n-type conductivity with a bulk electron carrier concentration n 1 × 10^sup 16^ cm^sup -3^ and Hall mobility μ 29 cm^sup 2^v^sup -1^s^sup -1^ for a CuCl sample doped with a nominal 3 mole % ZnCl^sub 2^. By use of an in situ CaF^sub 2^ capping layer, transmission >90% is achieved. At room temperature a strong Z^sub 3^ free excitonic emission occurs at 385 nm using both photoluminescence and x-ray excited optical luminescence, indicating the high optical quality of the doped material.[PUBLICATION ABSTRACT]