Optical and photoluminescence properties of Er-doped (GeSe2)1-x(Ga2Se3)x bulk glasses

• Published in: Journal of materials science. Materials in electronics 2007-10, Vol.18 (S1), p.231-234
• Main Authors: IKUTA, J, MAEDA, K, SAKAI, T, IKARI, T, KOUGHIA, K, MUNZAR, M, KASAP, S. O
• Format: Article
• Language: English
• Subjects: Applied sciences; Circuit properties; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Integrated optics. Optical fibers and wave guides; Materials; Optical and optoelectronic circuits
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-007-9195-7

Issue Title: Proceedings of the International Conference on Optical and Optoelectronic Properties of Materials and Applications (ICOOPMA 2006) Guest Editors: Jai Singh, Takeshi Aoki, Koichi Shimakawa and Harry Ruda Erbium (Er) doped chalcogenide glasses are important candidates for active optical wave guide applications at around 1550 nm. We have investigated Er^sup 3+^ doped stoichiometric (GeSe^sub 2^)^sub 1-x^(Ga^sub 2^Se^sub 3^)^sub x^ chalcogenide glasses (Ga content from 6 to 24 at.%, Er^sup 3+^ from 0.3 to 4 at.%). Bulk samples were investigated by X-ray diffraction (XRD), photoluminescence (PL) and optical transmittance measurements. We have observed that the PL intensity is nearly proportional to the Er^sup 3+^ concentration up to 2 at.% and then it tends to decrease slightly beyond this concentration. Consequently Er^sup 3+^ ions seem to be well dispersed and optically active up to 2 at.% Er^sup 3+^. In agreement with previous papers, we have found that Ga is extremely important for Er^sup 3+^ activation. PL results indicate that the critical Ga to Er concentration ratio for dissolving maximum Er is about 5. Glasses become inhomogeneous in compositions that have more that 12 at.% Ga.[PUBLICATION ABSTRACT]