Effect of thermal annealing on properties of zinc selenide thin films deposited by chemical bath deposition

• Published in: Journal of materials science. Materials in electronics 2009-04, Vol.20 (4), p.374-379
• Main Authors: Hankare, P. P., Chate, P. A., Sathe, D. J., Chavan, P. A., Bhuse, V. M.
• Format: Article
• Language: English
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Cross-disciplinary physics: materials science; rheology; Diffraction; Electronics; Exact sciences and technology; Glass substrates; Grain size; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials; Materials Science; Methods of deposition of films and coatings; film growth and epitaxy; Optical and Electronic Materials; Physics; Thin films
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-008-9736-8

Zinc selenide films have been deposited on glass substrate by chemical bath deposition method. The resultant films were annealed up to 473 K temperature. The structural properties of zinc selenide thin films have been investigated by X-ray diffraction techniques. The X-ray diffraction spectra showed that zinc selenide thin films are polycrystalline and have a cubic structure. The most preferential orientation is along the (111) direction for all films. The lattice parameter, grain size, and microstrain were calculated and correlated with annealing temperature. The optical properties showed direct band gap values were found to be in the region of 2.69–2.81 eV. The electrical studies shows conductivity increases with increase in annealing temperature. The optoelectric and structural data are discussed from the point of applications based on achieving high performance devices.