Improved direct determination of MOSFET saturation voltage using Fourier techniques

Obtaining the right value of the saturation voltage V/sub DSAT/ is an important issue for MOSFET modeling. However, the usual procedures are hampered by the noise introduced in the derivation steps. In this paper, an alternative method is presented which uses Fourier methods to clean this noise and...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-12, Vol.51 (12), p.2073-2077
Main Authors: Picos, R., Roca, M., Iniguez, B., Garcia-Moreno, E.
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
MOS devices
MOSFETs
parameter extraction
saturation voltage extraction
Semiconductor device modeling
Semiconductor device noise
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Obtaining the right value of the saturation voltage V/sub DSAT/ is an important issue for MOSFET modeling. However, the usual procedures are hampered by the noise introduced in the derivation steps. In this paper, an alternative method is presented which uses Fourier methods to clean this noise and thus, obtain more accurate results. Besides, the proposed technique allows for estimating the difference between the intrinsic and the extrinsic values of V/sub DSAT/, due to the parasitic drain/source resistances, thus enabling the use of this method in deep submicrometer technologies, down to 0.1 /spl mu/m.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.838317