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Independently driven DG MOSFETs for mixed-signal circuits: part II-applications on cross-coupled feedback and harmonics generation
Circuit applications utilizing the tight quasi-static and nonquasi-static channel coupling in independently driven double-gate (IDDG) MOSFETs are presented. The performances of cross-coupled differential amplifiers and mixers with IDDG are compared with those of the SDDG counterparts. The quasi-stat...
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Published in: | IEEE transactions on electron devices 2004-12, Vol.51 (12), p.2094-2101 |
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container_end_page | 2101 |
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container_title | IEEE transactions on electron devices |
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creator | Pei, G. Kan, E.C.-C. |
description | Circuit applications utilizing the tight quasi-static and nonquasi-static channel coupling in independently driven double-gate (IDDG) MOSFETs are presented. The performances of cross-coupled differential amplifiers and mixers with IDDG are compared with those of the SDDG counterparts. The quasi-static coupling in IDDG increases output voltage swing and improves voltage waveform symmetry in the cross-coupled differential amplifier. The nonquasi-static coupling in IDDG provides fast feedback in the differential amplifiers, and allows higher frequencies in the input signals for harmonic generation in mixers. We have identified plausible advantages in IDDG that cannot be readily implemented by SDDG, which justifies the fabrication cost and parasitic capacitance penalty of IDDG. |
doi_str_mv | 10.1109/TED.2004.838337 |
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The performances of cross-coupled differential amplifiers and mixers with IDDG are compared with those of the SDDG counterparts. The quasi-static coupling in IDDG increases output voltage swing and improves voltage waveform symmetry in the cross-coupled differential amplifier. The nonquasi-static coupling in IDDG provides fast feedback in the differential amplifiers, and allows higher frequencies in the input signals for harmonic generation in mixers. We have identified plausible advantages in IDDG that cannot be readily implemented by SDDG, which justifies the fabrication cost and parasitic capacitance penalty of IDDG.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2004.838337</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Circuit properties ; Differential amplifier ; Differential amplifiers ; double-gate (DG) MOSFET ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Feedback circuits ; Frequency conversion ; harmonic generation ; high-frequency circuit ; Mixed analog-digital integrated circuits ; mixer ; Mixers ; MOSFETs ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Signal convertors ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2094-2101</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The performances of cross-coupled differential amplifiers and mixers with IDDG are compared with those of the SDDG counterparts. The quasi-static coupling in IDDG increases output voltage swing and improves voltage waveform symmetry in the cross-coupled differential amplifier. The nonquasi-static coupling in IDDG provides fast feedback in the differential amplifiers, and allows higher frequencies in the input signals for harmonic generation in mixers. We have identified plausible advantages in IDDG that cannot be readily implemented by SDDG, which justifies the fabrication cost and parasitic capacitance penalty of IDDG.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Differential amplifier</subject><subject>Differential amplifiers</subject><subject>double-gate (DG) MOSFET</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Feedback circuits</subject><subject>Frequency conversion</subject><subject>harmonic generation</subject><subject>high-frequency circuit</subject><subject>Mixed analog-digital integrated circuits</subject><subject>mixer</subject><subject>Mixers</subject><subject>MOSFETs</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Signal convertors</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNpdkU1v1DAQhq0KpC6Fcw9cLCS4Zeuv2DE31M-VinqgPUcTZ1Jcsnawk4pe-eV4u5UqcZnRaJ53RjMvIcecrTln9uT2_GwtGFPrRjZSmgOy4nVtKquVfkNWjPGmsqVzSN7l_FBKrZRYkb-b0OOEJYR5fKJ98o8Y6Nkl_X7z4-L8NtMhJrr1f7Cvsr8PMFLnk1v8nL_SCdJMN5sKpmn0DmYfQ6YxUJdizpWLyzRiTwfEvgP3i0Lo6U9I2xi8y_QeA6ZnzXvydoAx44eXfETuyubTq-r65nJz-u26ctI0c2UHq7Dr-l4PErS1CmrrFJNCMgUMpNEgByOU5qa2DABF3RnU3AnT2c6CPCJf9nOnFH8vmOd267PDcYSAccmtaJTk1ooCfvoPfIhLKrfntmlU-bWSskAne-j52oRDOyW_hfTUctbuDGmLIe3OkHZvSFF8fhkL2cE4JAjO51eZFk0tzY77uOc8Ir62pRbWSPkPQQyUaQ</recordid><startdate>20041201</startdate><enddate>20041201</enddate><creator>Pei, G.</creator><creator>Kan, E.C.-C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20041201</creationdate><title>Independently driven DG MOSFETs for mixed-signal circuits: part II-applications on cross-coupled feedback and harmonics generation</title><author>Pei, G. ; Kan, E.C.-C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-9f94ebbdd6f3a6994a59c4032304a0a376a3f724617590aae25b7e61c27b9b9a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Differential amplifier</topic><topic>Differential amplifiers</topic><topic>double-gate (DG) MOSFET</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Feedback circuits</topic><topic>Frequency conversion</topic><topic>harmonic generation</topic><topic>high-frequency circuit</topic><topic>Mixed analog-digital integrated circuits</topic><topic>mixer</topic><topic>Mixers</topic><topic>MOSFETs</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Signal convertors</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pei, G.</creatorcontrib><creatorcontrib>Kan, E.C.-C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pei, G.</au><au>Kan, E.C.-C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Independently driven DG MOSFETs for mixed-signal circuits: part II-applications on cross-coupled feedback and harmonics generation</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2004-12-01</date><risdate>2004</risdate><volume>51</volume><issue>12</issue><spage>2094</spage><epage>2101</epage><pages>2094-2101</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Circuit applications utilizing the tight quasi-static and nonquasi-static channel coupling in independently driven double-gate (IDDG) MOSFETs are presented. The performances of cross-coupled differential amplifiers and mixers with IDDG are compared with those of the SDDG counterparts. The quasi-static coupling in IDDG increases output voltage swing and improves voltage waveform symmetry in the cross-coupled differential amplifier. The nonquasi-static coupling in IDDG provides fast feedback in the differential amplifiers, and allows higher frequencies in the input signals for harmonic generation in mixers. We have identified plausible advantages in IDDG that cannot be readily implemented by SDDG, which justifies the fabrication cost and parasitic capacitance penalty of IDDG.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2004.838337</doi><tpages>8</tpages></addata></record> |
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subjects | Amplifiers Applied sciences Circuit properties Differential amplifier Differential amplifiers double-gate (DG) MOSFET Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Feedback circuits Frequency conversion harmonic generation high-frequency circuit Mixed analog-digital integrated circuits mixer Mixers MOSFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors Transistors |
title | Independently driven DG MOSFETs for mixed-signal circuits: part II-applications on cross-coupled feedback and harmonics generation |
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