Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-09, Vol.51 (9), p.1441-1447
Main Authors: JER-HUEIH CHEN, James, BOJARCZUK, Nestor A, HUILING SHANG, COPEL, Matthew, HANNON, James B, KARASINSKI, Joseph, PREISLER, Edward, BANERJEE, Sanjay K, GUHA, Supratik
Format: Article
Language:English
Subjects:
Applied sciences
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.833593