Theoretical and experimental investigation of Si nanocrystal memory device with HfO2 high-k tunneling dielectric

In this paper, silicon (Si) nanocrystal memory using chemical vapor deposition (CVD) HfO2 high-k dielectrics to replace the traditional SiO2 tunneling/control dielectrics has been fabricated and characterized for the first time.

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Bibliographic Details
Published in:IEEE transactions on electron devices 2003-10, Vol.50 (10), p.2067
Main Authors: Lee, Jong Jin, Wang, Xuguang, Bai, Weiping, Lu, Nan, Kwong, Dim-Lee
Format: Article
Language:English
Subjects:
Nanocrystals
Semiconductors
Online Access:Get full text
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Description
Summary:In this paper, silicon (Si) nanocrystal memory using chemical vapor deposition (CVD) HfO2 high-k dielectrics to replace the traditional SiO2 tunneling/control dielectrics has been fabricated and characterized for the first time.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.816107