Microscopic modeling of nonlinear transport in ballistic nanodevices

By using a semi-classical two-dimensional (2-D) Monte Carlo simulation, simple ballistic devices based on AlInAs/InGaAs channels are analyzed. Our simulations qualitatively reproduce the experimental results in T- and Y-branch junctions as well as in a ballistic rectifier appearing as a result of el...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2003-09, Vol.50 (9), p.1897-1905
Main Authors: Mateos, J., Vasallo, B.G., Pardo, D., Gonzalez, T., Galloo, J.S., Bollaert, S., Roelens, Y., Cappy, A.
Format: Article
Language:English
Subjects:
Aluminum compounds
Computer simulation
Devices
Electron transport
Gallium compounds
Indium compounds
Monte Carlo methods
Nanocomposites
Nanomaterials
Nanostructure
Semiconductor device modeling
Solid state rectifiers
Space charge
Submillimeter wave devices
Transport
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Summary:By using a semi-classical two-dimensional (2-D) Monte Carlo simulation, simple ballistic devices based on AlInAs/InGaAs channels are analyzed. Our simulations qualitatively reproduce the experimental results in T- and Y-branch junctions as well as in a ballistic rectifier appearing as a result of electron ballistic transport. We show that a quantum description of electron transport is not essential for the physical explanation of these results since phase coherence plays no significant role. On the contrary, its origin can be purely classical: the presence of classical electron transport and space charge inside the structures.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.815858