Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels

Device and circuit simulations using a process/physics-based compact MOSFET model (UFPDB) are done to project the scaled CMOS speed-performance enhancement that can be expected from strained-Si channels on relaxed Si/sub 1-x/Ge/sub x/ buffer layers in bulk Si. With the UFPDB process-based parameters...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2003-04, Vol.50 (4), p.1042-1049
Main Authors: Fossum, J.G., Weimin Zhang
Format: Article
Language:English
Subjects:
Charge carrier mobility
CMOS integrated circuits
Germanium alloys
MOSFETs
Semiconductor device modeling
Semiconductor materials
Silicon alloys
SPICE
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Summary:Device and circuit simulations using a process/physics-based compact MOSFET model (UFPDB) are done to project the scaled CMOS speed-performance enhancement that can be expected from strained-Si channels on relaxed Si/sub 1-x/Ge/sub x/ buffer layers in bulk Si. With the UFPDB process-based parameters associated with carrier mobility and velocity defined physically in terms of the Ge content x (0/spl les/x/spl les/0.50), and with threshold voltages (V/sub t/) reduced due to the bandgap narrowing defined by x, but adjusted (for I/sub off/ control) to equal those of the Si-channel control devices, UFPDB/Spice3 simulations of 60 nm CMOS ring oscillators predict only a small speed enhancement when V/sub t/ is adjusted via channel doping. The peak enhancement is 5% for x=0.20. However, when a p/sup +/ poly-SiGe gate is used to adjust V/sub t/ of the pMOSFET, a peak 16% speed enhancement at x=0.30 is predicted; for pragmatic x=0.20, the enhancement is 14%.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.812491