Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes

We demonstrate long-wavelength (/spl lambda/ = 1.3 and 1.5 μm) high-speed (10 Gb/s) InGaAs-InP separate absorption-grading-and-multiplication region avalanche photodiodes (SAGM-APDs) employing a double diffused floating guard ring (FGR) structure to eliminate edge breakdown. The simple /spl ges/ 60-...

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Bibliographic Details
Published in:IEEE photonics technology letters 2002-07, Vol.14 (7), p.977-979
Main Authors: Ran Wei, Dries, J.C., Hongsheng Wang, Lange, M.L., Olsen, G.H., Forrest, S.R.
Format: Article
Language:English
Subjects:
Absorption
Avalanche breakdown
Avalanche photodiodes
Avalanches
Bandwidth
Diffusion
Electric breakdown
Floating structures
Guards
High speed
Indium gallium arsenide
Indium phosphide
Noise measurement
Optical noise
Optimization
Photodiodes
Thin films
Tunneling
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Summary:We demonstrate long-wavelength (/spl lambda/ = 1.3 and 1.5 μm) high-speed (10 Gb/s) InGaAs-InP separate absorption-grading-and-multiplication region avalanche photodiodes (SAGM-APDs) employing a double diffused floating guard ring (FGR) structure to eliminate edge breakdown. The simple /spl ges/ 60-GHz gain-bandwidth product double diffused FGR structure was optimized using theoretical and experimental studies. The APD excess noise factor was measured, and suggests that dead-length effects must be considered in designing high bandwidth devices with thin multiplication layers.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2002.1012404