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Linewidth broadening in a distributed feedback laser integrated with a semiconductor optical amplifier

The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of anti reflection-coated SOA output facets is derived and si...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2002-11, Vol.38 (11), p.1493-1502
Main Authors: Champagne, A., Camel, J., Maciejko, R., Kasunic, K.J., Adams, D.M., Tromborg, B.
Format: Article
Language:English
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Summary:The problem of the linewidth degradation in systems using distributed-feedback lasers together with strained-layer multi-quantum-well semiconductor optical amplifiers (SOAs) is examined. A modified expression for the linewidth in the case of anti reflection-coated SOA output facets is derived and simulation results are given in the case of output facets with a nonvanishing reflectivity. A numerical model combining finite-element calculations in the transverse x-y plane and a longitudinal model based on the Green's function method is used for that purpose.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2002.804263