Renormalization group meshes and the discretization of TCAD equations

This paper presents a new method to discretize the equations for the physical modeling of semiconductor devices and back-end patterns. The method assembles planes in two dimensions and cubes in three dimensions and allows for adaptive meshing without the occurrence of spurious nodes due to mesh smoo...

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Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 2002-12, Vol.21 (12), p.1425-1433
Main Authors: Schoenmaker, W., Magnus, W., Meuris, P., Maleszka, B.
Format: Article
Language:English
Subjects:
Assembly
Computer aided design
Design engineering
Discretization
Finite element method
Integrodifferential equations
Mathematical analysis
Mathematical models
Maxwell equations
Microelectronics
Partial differential equations
Piecewise linear approximation
Power engineering and energy
Semiconductor devices
Semiconductor process modeling
Smoothing methods
Three dimensional
Two dimensional
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Summary:This paper presents a new method to discretize the equations for the physical modeling of semiconductor devices and back-end patterns. The method assembles planes in two dimensions and cubes in three dimensions and allows for adaptive meshing without the occurrence of spurious nodes due to mesh smoothing. Whereas the applications that are discussed focus on the design of microelectronic devices, the method is generally applicable to all fields of engineering where ab initio physical modeling is required.
ISSN:0278-0070
1937-4151
DOI:10.1109/TCAD.2002.804383