Comprehensive Microscopic Analysis of Laser-Induced High Doping Regions in Silicon

Microscopic laser-doped regions in advanced solar cell concepts are analyzed to determine the doping density and to identify the damage caused by the laser process. For these investigations, microphotoluminescence spectroscopy and micro-Raman spectroscopy are utilized to measure doping density, inte...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-09, Vol.58 (9), p.2874-2877
Main Authors: Gundel, P., Suwito, D., Jager, U., Heinz, F. D., Warta, W., Schubert, M. C.
Format: Article
Language:English
Subjects:
Applied sciences
Carrier lifetime
Charge carrier lifetime
Damage
Density
Density measurement
Doping
Electronics
Energy
Exact sciences and technology
Laser doping
Lasers
Measurement by laser beam
Micrometers
Natural energy
Optoelectronic devices
photoluminescence
Photovoltaic cells
Photovoltaic conversion
Raman
Residual stress
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Spectroscopy
Stress
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Summary:Microscopic laser-doped regions in advanced solar cell concepts are analyzed to determine the doping density and to identify the damage caused by the laser process. For these investigations, microphotoluminescence spectroscopy and micro-Raman spectroscopy are utilized to measure doping density, internal stress, and carrier lifetime with micrometer resolution. This analysis proves the high applicability of the microspectroscopic techniques for the characterization of laser-doped regions by analyzing the profile of the advanced local doping process and the laser-induced damage particularly at the edges of the highly doped regions.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2158649