Analytical Correction for Effective Mobility Measurements in MOSFETs

Differences in drain bias used for the capacitance and current measurement steps can lead to inaccuracy in the extraction of mobility at low fields. An analytical correction for a bulk MOSFET can be applied to the capacitance measurement to correct for the effect of drain bias provided doping and ox...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-09, Vol.58 (9), p.2871-2873
Main Authors: Morgensen, M. P., Lunardi, L. M.
Format: Article
Language:English
Subjects:
Applied sciences
Approximation methods
Bias
Bulk density
Capacitance
Capacitance measurement
Current measurement
Density
Drains
Electronics
Exact sciences and technology
Mathematical analysis
Mobility
MOSFET
MOSFETs
Oxides
Semiconductor device measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solids
Transistors
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Description
Summary:Differences in drain bias used for the capacitance and current measurement steps can lead to inaccuracy in the extraction of mobility at low fields. An analytical correction for a bulk MOSFET can be applied to the capacitance measurement to correct for the effect of drain bias provided doping and oxide capacitance density are known. The proposed correction successfully corrects measured mobility data and is proven by comparison with results obtained from an improved but experimentally more complicated technique.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2158581