Contributions to the large blue emission shift in a GaAsSb type-II laser

The large blue shift in the emission with excitation in a GaAsSb-based type-II quantum well is investigated experimentally and theoretically. Comparison of theory with experiment is made for lasers with "W" type-II structures. The analysis shows the blue shift to be the result of charge-se...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2001-09, Vol.37 (9), p.1178-1182
Main Authors: Chow, W.W., Spahn, O.B., Schneider, H.C., Klem, J.E.
Format: Article
Language:English
Subjects:
Blue shift
Emission
Emission analysis
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gain
Gallium arsenide
Laser excitation
Laser theory
Laser transitions
Lasers
Optics
Physics
Quantum electronics
Quantum well lasers
Quantum wells
Semiconductor lasers
Semiconductor lasers
laser diodes
Surface emitting lasers
Temperature
Threshold current
Thresholds
Vertical cavity surface emitting lasers
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Summary:The large blue shift in the emission with excitation in a GaAsSb-based type-II quantum well is investigated experimentally and theoretically. Comparison of theory with experiment is made for lasers with "W" type-II structures. The analysis shows the blue shift to be the result of charge-separation, band-distortion, and many-body interactions. For a high threshold gain, there is an additional contribution from the n=2 subband transition.
ISSN:0018-9197
1558-1713
DOI:10.1109/3.945323