Varistor behavior of the system SnO2.CoO.Ta2O5.Cr2O3

In this work the system (98.95-x)% SnO2+1%CoO+0.05%Ta2O5+x%Cr2O3 (mol %) was studied, with x=0.05 and 0.10, prepared by the conventional method of oxides mixture, and sintered at 1300 and 1350 °C for 2 h. The non-linear J versus E electrical characteristics (α=25) were obtained in the Ta^sub 2^O^sub...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2002-05, Vol.13 (5), p.253-256
Main Authors: MENEGOTTO, G. F, PIANARO, S. A, ZARA, A. J, ANTUNES, S. R. M, ANTUNES, A. C
Format: Article
Language:English
Subjects:
Applied sciences
Ceramics
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Metallurgy
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Summary:In this work the system (98.95-x)% SnO2+1%CoO+0.05%Ta2O5+x%Cr2O3 (mol %) was studied, with x=0.05 and 0.10, prepared by the conventional method of oxides mixture, and sintered at 1300 and 1350 °C for 2 h. The non-linear J versus E electrical characteristics (α=25) were obtained in the Ta^sub 2^O^sub 5^ and Cr^sub 2^O^sub 3^-CoO doped highly densified SnO^sub 2^ ceramics. X-ray diffraction analysis showed that these ceramics are apparently single phase. Electrical properties and microstructure are highly dependent on the Cr^sub 2^O^sub 3^ concentration and on the sintering temperature. Excess of Cr^sub 2^O^sub 3^ leads to porous ceramics destroying the electrical characteristics of the material. Dopant solid solution formation in the SnO^sub 2^ may be responsible for the formation of electrical barriers in the grain boundaries.[PUBLICATION ABSTRACT]
ISSN:0957-4522
1573-482X
DOI:10.1023/A:1015530816187