Low-threshold InGaAsP ring lasers fabricated using bi-level dry etching

We report a novel bi-level etching technique that permits the use of standard photolithography for coupling to deeply etched ring resonator structures. The technique is employed to demonstrate InGaAsP laterally coupled racetrack ring resonators laser with record low threshold currents of 66 mA. The...

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Bibliographic Details
Published in:IEEE photonics technology letters 2000-02, Vol.12 (2), p.146-148
Main Authors: Griffel, G., Abeles, J.H., Menna, R.J., Braun, A.M., Connolly, J.C., King, M.
Format: Article
Language:English
Subjects:
Bending
Etching
Laser modes
Lasers
Lithography
Microcavities
Optical coupling
Optical device fabrication
Optical losses
Optical ring resonators
Photolithography
Photonics
Resonators
Ring lasers
Threshold current
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Summary:We report a novel bi-level etching technique that permits the use of standard photolithography for coupling to deeply etched ring resonator structures. The technique is employed to demonstrate InGaAsP laterally coupled racetrack ring resonators laser with record low threshold currents of 66 mA. The racetrack laser have curved sections of 150-μm radius with negligible bending loss. The lasers operate continuous-wave single mode up to nearly twice threshold with a 26-dB side-mode-suppression ratio. Bi-level etching is of interest for fabrication of mesoscopic or microcavity photonic resonator structures without relying on submicrometer processing.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.823498