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Evaluation of front flux guide-type magnetic tunnel junction heads
Magnetic tunnel junction (MTJ) heads have been successfully fabricated using the free layer as flux guide to prevent electrical short during the definition of the air bearing surface (ABS). For a 6 Gbits/in/sup 2/ design, an output as high as 5740 /spl mu/Vpp was achieved for 3 mA sense current, and...
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Published in: | IEEE transactions on magnetics 2000-09, Vol.36 (5), p.2542-2544 |
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creator | Shimazawa, K. Redon, O. Kasahara, N. Sun, J.J. Sato, K. Kagami, T. Saruki, S. Umehara, T. Fujita, Y. Yarimizu, S. Araki, S. Morita, H. Matsuzaki, M. |
description | Magnetic tunnel junction (MTJ) heads have been successfully fabricated using the free layer as flux guide to prevent electrical short during the definition of the air bearing surface (ABS). For a 6 Gbits/in/sup 2/ design, an output as high as 5740 /spl mu/Vpp was achieved for 3 mA sense current, and the output waveform was stable and noise free. Noise analysis confirmed that shot noise is prevailing in these MTJ heads, suggesting that the junction resistance has to be further reduced to challenge spin-valve heads in terms of signal to noise ratio. Landau-Lifshitz-Gilbert simulations showed that for 20 Gbits/in/sup 2/ application, the flux guide height should not exceed 0.1 /spl mu/m. |
doi_str_mv | 10.1109/20.908501 |
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For a 6 Gbits/in/sup 2/ design, an output as high as 5740 /spl mu/Vpp was achieved for 3 mA sense current, and the output waveform was stable and noise free. Noise analysis confirmed that shot noise is prevailing in these MTJ heads, suggesting that the junction resistance has to be further reduced to challenge spin-valve heads in terms of signal to noise ratio. Landau-Lifshitz-Gilbert simulations showed that for 20 Gbits/in/sup 2/ application, the flux guide height should not exceed 0.1 /spl mu/m.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/20.908501</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>ABS resins ; Acoustical engineering ; Applied sciences ; Design engineering ; Electronics ; Exact sciences and technology ; Flux ; Gas bearings ; Magnetic devices ; Magnetic field measurement ; Magnetic flux ; Magnetic heads ; Magnetic shielding ; Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc ; Magnetic tunneling ; Magnetism ; Noise ; Noise reduction ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Signal to noise ratio ; Simulation ; Sun ; Temperature ; Tunnel junctions ; Waveforms</subject><ispartof>IEEE transactions on magnetics, 2000-09, Vol.36 (5), p.2542-2544</ispartof><rights>2001 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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For a 6 Gbits/in/sup 2/ design, an output as high as 5740 /spl mu/Vpp was achieved for 3 mA sense current, and the output waveform was stable and noise free. Noise analysis confirmed that shot noise is prevailing in these MTJ heads, suggesting that the junction resistance has to be further reduced to challenge spin-valve heads in terms of signal to noise ratio. Landau-Lifshitz-Gilbert simulations showed that for 20 Gbits/in/sup 2/ application, the flux guide height should not exceed 0.1 /spl mu/m.</description><subject>ABS resins</subject><subject>Acoustical engineering</subject><subject>Applied sciences</subject><subject>Design engineering</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Flux</subject><subject>Gas bearings</subject><subject>Magnetic devices</subject><subject>Magnetic field measurement</subject><subject>Magnetic flux</subject><subject>Magnetic heads</subject><subject>Magnetic shielding</subject><subject>Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc</subject><subject>Magnetic tunneling</subject><subject>Magnetism</subject><subject>Noise</subject><subject>Noise reduction</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Signal to noise ratio</subject><subject>Simulation</subject><subject>Sun</subject><subject>Temperature</subject><subject>Tunnel junctions</subject><subject>Waveforms</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNpdkD1PwzAQhi0EEqUwsDJFMCCGFF9sp_YIVfmQKrHAbDnOuaRKnRLHiP57UlKBxHQ63fM-Or2EnAOdAFB1m9GJolJQOCAjUBxSSnN1SEaUgkwVz_kxOQlh1a9cAB2R-_mnqaPpqsYnjUtc2_gucXX8SpaxKjHtthtM1mbpsats0kXvsU5W0dufxDuaMpySI2fqgGf7OSZvD_PX2VO6eHl8nt0tUssY61LIMMuMsgJYmUtWFlNR9q9ijsxIq0rmjHNYqIILXpSCTpnIKVOGGoYCgLExuR68m7b5iBg6va6Cxbo2HpsYtAKeMw5K9uTlP3LVxNb3z2kpBSjIxQ66GSDbNiG06PSmrdam3WqgetelzqgeuuzZq73QBGtq1xpvq_Ab6HuV053xYqAqRPw7Dopv1LF53g</recordid><startdate>20000901</startdate><enddate>20000901</enddate><creator>Shimazawa, K.</creator><creator>Redon, O.</creator><creator>Kasahara, N.</creator><creator>Sun, J.J.</creator><creator>Sato, K.</creator><creator>Kagami, T.</creator><creator>Saruki, S.</creator><creator>Umehara, T.</creator><creator>Fujita, Y.</creator><creator>Yarimizu, S.</creator><creator>Araki, S.</creator><creator>Morita, H.</creator><creator>Matsuzaki, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Signal to noise ratio</topic><topic>Simulation</topic><topic>Sun</topic><topic>Temperature</topic><topic>Tunnel junctions</topic><topic>Waveforms</topic><toplevel>online_resources</toplevel><creatorcontrib>Shimazawa, K.</creatorcontrib><creatorcontrib>Redon, O.</creatorcontrib><creatorcontrib>Kasahara, N.</creatorcontrib><creatorcontrib>Sun, J.J.</creatorcontrib><creatorcontrib>Sato, K.</creatorcontrib><creatorcontrib>Kagami, T.</creatorcontrib><creatorcontrib>Saruki, S.</creatorcontrib><creatorcontrib>Umehara, T.</creatorcontrib><creatorcontrib>Fujita, Y.</creatorcontrib><creatorcontrib>Yarimizu, S.</creatorcontrib><creatorcontrib>Araki, S.</creatorcontrib><creatorcontrib>Morita, H.</creatorcontrib><creatorcontrib>Matsuzaki, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shimazawa, K.</au><au>Redon, O.</au><au>Kasahara, N.</au><au>Sun, J.J.</au><au>Sato, K.</au><au>Kagami, T.</au><au>Saruki, S.</au><au>Umehara, T.</au><au>Fujita, Y.</au><au>Yarimizu, S.</au><au>Araki, S.</au><au>Morita, H.</au><au>Matsuzaki, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evaluation of front flux guide-type magnetic tunnel junction heads</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>2000-09-01</date><risdate>2000</risdate><volume>36</volume><issue>5</issue><spage>2542</spage><epage>2544</epage><pages>2542-2544</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>Magnetic tunnel junction (MTJ) heads have been successfully fabricated using the free layer as flux guide to prevent electrical short during the definition of the air bearing surface (ABS). For a 6 Gbits/in/sup 2/ design, an output as high as 5740 /spl mu/Vpp was achieved for 3 mA sense current, and the output waveform was stable and noise free. Noise analysis confirmed that shot noise is prevailing in these MTJ heads, suggesting that the junction resistance has to be further reduced to challenge spin-valve heads in terms of signal to noise ratio. Landau-Lifshitz-Gilbert simulations showed that for 20 Gbits/in/sup 2/ application, the flux guide height should not exceed 0.1 /spl mu/m.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/20.908501</doi><tpages>3</tpages></addata></record> |
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subjects | ABS resins Acoustical engineering Applied sciences Design engineering Electronics Exact sciences and technology Flux Gas bearings Magnetic devices Magnetic field measurement Magnetic flux Magnetic heads Magnetic shielding Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.) domain-motion devices, etc Magnetic tunneling Magnetism Noise Noise reduction Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal to noise ratio Simulation Sun Temperature Tunnel junctions Waveforms |
title | Evaluation of front flux guide-type magnetic tunnel junction heads |
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