Modeling of short geometry polycrystalline-silicon thin-film transistor

An accurate model for the device characteristics of a short geometry polysilicon thin-film transistor (poly-Si TFT) is developed. The proposed channel length dependent threshold voltage and the current-voltage (I-V) characteristics determined are in excellent agreement with experimental results conf...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2000-12, Vol.47 (12), p.2444-2446
Main Authors: Chopra, S., Gupta, R.S.
Format: Article
Language:English
Subjects:
Channels
Devices
Grain size
Semiconductor devices
Silicon
Thin film transistors
Threshold voltage
Transistors
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Summary:An accurate model for the device characteristics of a short geometry polysilicon thin-film transistor (poly-Si TFT) is developed. The proposed channel length dependent threshold voltage and the current-voltage (I-V) characteristics determined are in excellent agreement with experimental results confirming the validity of this model. The impact of the grain size on device characteristics is also shown.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.887036