Indium Composition Variation in Nominally Uniform InGaN Layers Discovered by Aberration-Corrected Z-contrast STEM

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

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Bibliographic Details
Published in:Microscopy and microanalysis 2011-07, Vol.17 (S2), p.1386-1387
Main Authors: Yankovich, A, Kvit, A, Li, X, Zhang, F, Avrutin, V, Liu, H, Izyumskaya, N, Özgür, Ü, Morkoc, H, Voyles, P
Format: Article
Language:English
Subjects:
Physical Sciences
Structural and Physical properties of Thin Films, Interfaces, and Grain Boundaries
Online Access:Get full text
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Description
Summary:Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.
ISSN:1431-9276
1435-8115
DOI:10.1017/S143192761100780X