Carrier Dynamics Investigation on Passivation Dielectric Constant and RF Performance of Millimeter-Wave Power GaN HEMTs

The effect of the passivation layer dielectric constant and T-gate geometry on the performance of millimeter-wave high-power GaN HEMTs is investigated through a nanoscale carrier dynamics description obtained by full-band cellular Monte Carlo simulation. The effective gate length is found to be incr...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-11, Vol.58 (11), p.3876-3884
Main Authors: Guerra, D., Saraniti, M., Ferry, D. K., Goodnick, S. M., Marino, F. A.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Carriers
Computer simulation
Devices
Dielectric constant
Dynamics
effective gate length
Electronics
Exact sciences and technology
Gallium nitride
GaN
high frequency
highelectron mobility transistors (HEMT)
Logic gates
Monte Carlo
Monte Carlo methods
Nanostructure
numerical simulation
Passivation
phonons
Scattering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon compounds
Transistors
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Summary:The effect of the passivation layer dielectric constant and T-gate geometry on the performance of millimeter-wave high-power GaN HEMTs is investigated through a nanoscale carrier dynamics description obtained by full-band cellular Monte Carlo simulation. The effective gate length is found to be increased by fringing capacitances and enhanced by the dielectric constant of the passivation layer in the regions adjacent to the gate for layers thicker than about 5 nm. Detailed simulation results are shown for the carrier energy, velocity, scattering, and electric field profiles along the channel. The output impedance under small- and large-signal operations is also discussed. Our results indicate that the effect of the passivation layer dielectric constant changes the nanoscale carrier dynamics and can strongly affect the radio-frequency performance of deep submicrometer devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2164407