Fabrication and characterization of amorphous In-Zn-O/SiO^sub x^/n-Si heterojunction solar cells

Amorphous In-Zn-O (a-IZO) films were deposited on SiO... covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiO.../n-Si heterojunction solar cells. The a-IZO films grown at 150 °C with various laser power (250-500 mJ/pulse) exhibit low resistivity (2-3 x 10.....

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Bibliographic Details
Published in:Solar energy 2011-11, Vol.85 (11), p.2589
Main Authors: Fang, Hau-Wei, Liu, Shiu-Jen, Hsieh, Tsung-Eong, Juang, Jenh-Yih, Hsieh, Jang-Hsing
Format: Article
Language:English
Subjects:
Energy efficiency
Photovoltaic cells
Solar energy
Substrates
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Summary:Amorphous In-Zn-O (a-IZO) films were deposited on SiO... covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiO.../n-Si heterojunction solar cells. The a-IZO films grown at 150 °C with various laser power (250-500 mJ/pulse) exhibit low resistivity (2-3 x 10... cm) and high transparency (~80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiO.../n-Si solar cells is 2.2% under 100 mW/cm... illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24 V, 28.4 mA/cm... and 33.6%, respectively. (ProQuest: ... denotes formulae/symbols omitted.)
ISSN:0038-092X
1471-1257