Quantification of Self-Damping of Power MOSFET in a Synchronous Buck Converter

Ringing in the switching waveform of the switching power supply (e.g., synchronous buck converter) is known to cause broadband electromagnetic interference problems in the 30-300 MHz range. The measured switching waveform shows overshoot and, then, exponential decay of the ringing. It has been obser...

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Bibliographic Details
Published in:IEEE transactions on electromagnetic compatibility 2011-11, Vol.53 (4), p.1091-1093
Main Authors: Keong Kam, Pommerenke, D., Bhargava, A., Steinfeld, B., Cheung-wei Lam, Centola, F.
Format: Article
Language:English
Subjects:
Applied sciences
Attenuation
broadband EMI
Buck converter electromagnetic interference (EMI)
Capacitance
Circuit properties
Electric, optical and optoelectronic circuits
Electrical engineering. Electrical power engineering
Electromagnetic interference
Electronic circuits
Electronics
Exact sciences and technology
FET device parameter R _{\rm oss}
FETs
Loss measurement
Other multijunction devices. Power transistors. Thyristors
Power electronics, power supplies
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal convertors
switch ringing
Switches
Transistors
Transmission line measurements
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Summary:Ringing in the switching waveform of the switching power supply (e.g., synchronous buck converter) is known to cause broadband electromagnetic interference problems in the 30-300 MHz range. The measured switching waveform shows overshoot and, then, exponential decay of the ringing. It has been observed that this exponential decay rate varies significantly between using different low-side FETs; thus, the low-side FET dominates the attenuation of the ringing. This paper provides a novel method for quantifying the losses by using the measureable quantity " R oss ," which is equivalent to the loss of the output capacitance C oss of the FET. This paper describes the method of measuring R oss and explains its relevance to the self-damping of the switch ringing. The method permits selection of a low-side FET to optimize the electromagnetic compatibility performances of the supply.
ISSN:0018-9375
1558-187X
DOI:10.1109/TEMC.2011.2157165