Distribution of visible luminescence centers in hydrogen-doped ZnO

ZnO crystals have been investigated by scanning cathodoluminescence microscopy and spectroscopy at 80 K following hydrogen incorporation by plasma exposure. The intensity of the ZnO near-band-edge (NBE) emission is greatly enhanced while the defect-related green emission is quenched following plasma...

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Bibliographic Details
Published in:Journal of materials research 2011-12, Vol.26 (23), p.2912-2915
Main Authors: Lem, Laurent L.C., Ton-That, Cuong, Phillips, Matthew R.
Format: Article
Language:English
Subjects:
Applied and Technical Physics
Biomaterials
Crystal structure
Crystals
Defects
Electron microscopes
Energy
Hydrogen
Inorganic Chemistry
Luminescence
Materials Engineering
Materials research
Materials Science
Nanotechnology
Optics
Power
Radio frequency plasma
Spectrum analysis
Studies
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Summary:ZnO crystals have been investigated by scanning cathodoluminescence microscopy and spectroscopy at 80 K following hydrogen incorporation by plasma exposure. The intensity of the ZnO near-band-edge (NBE) emission is greatly enhanced while the defect-related green emission is quenched following plasma treatment. These effects are attributed to the passivation of zinc vacancies by hydrogen. The green and yellow intensities and their intensity ratios to the NBE vary with excitation depth for both undoped and H-doped ZnO crystals. The intensities of the green and yellow emissions exhibit sublinear dependencies on electron beam excitation density while the NBE intensity increases linearly with the excitation density. These saturation effects with increasing excitation density must be taken into account when assessing defects in ZnO by luminescence characterization.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2011.383