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Low standby power state storage for sub-130-nm technologies
Handheld and other battery-powered ICs require process scaling to increase functional integration and reduce active power consumption. Scaling also increases leakage current components to the point where standby power is frequently a limiting design factor. A scheme combining low-leakage thick-gate...
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Published in: | IEEE journal of solid-state circuits 2005-02, Vol.40 (2), p.498-506 |
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cites | cdi_FETCH-LOGICAL-c383t-9cdd2dce8c91a3dfd78433c8a9a6b4f5f20cbff345287c7c0b321048ba7ba5763 |
container_end_page | 506 |
container_issue | 2 |
container_start_page | 498 |
container_title | IEEE journal of solid-state circuits |
container_volume | 40 |
creator | Clark, L.T. Ricci, F. Biyani, M. |
description | Handheld and other battery-powered ICs require process scaling to increase functional integration and reduce active power consumption. Scaling also increases leakage current components to the point where standby power is frequently a limiting design factor. A scheme combining low-leakage thick-gate shadow latches and high-performance transistors is presented that decouples performance from standby power in sub-130-nm technologies. Circuit design and operation, including pulse-clocked latches, use of dynamic circuits, and inclusion of scan is presented. The approach is validated by experimental results on a 90-nm process. |
doi_str_mv | 10.1109/JSSC.2004.840987 |
format | article |
fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_journals_911980439</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1388639</ieee_id><sourcerecordid>2543188301</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-9cdd2dce8c91a3dfd78433c8a9a6b4f5f20cbff345287c7c0b321048ba7ba5763</originalsourceid><addsrcrecordid>eNp9kM9LwzAUx4MoOKd3wUsR1FNn0qTtC57G8CcDD1PwFtI0mR1dM5OWsf_elA4GHrwkvLzP-z7yQeiS4AkhmN-_LRazSYIxmwDDHPIjNCJpCjHJ6dcxGmFMIOahf4rOvF-FkjEgI_Qwt9vIt7Ipi120sVvt-qrV4bROLnVkbHjpiphQHDfrqNXqu7G1XVban6MTI2uvL_b3GH0-PX7MXuL5-_PrbDqPFQXaxlyVZVIqDYoTSUtT5sAoVSC5zApmUpNgVRhDWZpArnKFC5oQzKCQeSHTPKNjdDfkbpz96bRvxbrySte1bLTtvACeJZQAZoG8_ZdMAFOeAQTw-g-4sp1rwi8EJ4T3WTxAeICUs947bcTGVWvpdoJg0UsXvXTRSxeD9DBys8-VXsnaONmoyh_msmCdMhK4q4GrtNaHNgXIwuJf8GuJGQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>911980439</pqid></control><display><type>article</type><title>Low standby power state storage for sub-130-nm technologies</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Clark, L.T. ; Ricci, F. ; Biyani, M.</creator><creatorcontrib>Clark, L.T. ; Ricci, F. ; Biyani, M.</creatorcontrib><description>Handheld and other battery-powered ICs require process scaling to increase functional integration and reduce active power consumption. Scaling also increases leakage current components to the point where standby power is frequently a limiting design factor. A scheme combining low-leakage thick-gate shadow latches and high-performance transistors is presented that decouples performance from standby power in sub-130-nm technologies. Circuit design and operation, including pulse-clocked latches, use of dynamic circuits, and inclusion of scan is presented. The approach is validated by experimental results on a 90-nm process.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2004.840987</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Batteries ; Circuit design ; Circuit properties ; Circuit synthesis ; Circuits ; Constraining ; Digital circuits ; Dynamic voltage scaling ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Energy consumption ; Exact sciences and technology ; Frequency ; Functional integration ; Latches ; Leakage current ; Leakage currents ; logic circuits ; low power ; Power consumption ; Power supplies ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; sequential logic circuits ; Shadows ; Threshold voltage ; Transistors ; Tunneling</subject><ispartof>IEEE journal of solid-state circuits, 2005-02, Vol.40 (2), p.498-506</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-9cdd2dce8c91a3dfd78433c8a9a6b4f5f20cbff345287c7c0b321048ba7ba5763</citedby><cites>FETCH-LOGICAL-c383t-9cdd2dce8c91a3dfd78433c8a9a6b4f5f20cbff345287c7c0b321048ba7ba5763</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1388639$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,54794</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16448341$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Clark, L.T.</creatorcontrib><creatorcontrib>Ricci, F.</creatorcontrib><creatorcontrib>Biyani, M.</creatorcontrib><title>Low standby power state storage for sub-130-nm technologies</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>Handheld and other battery-powered ICs require process scaling to increase functional integration and reduce active power consumption. Scaling also increases leakage current components to the point where standby power is frequently a limiting design factor. A scheme combining low-leakage thick-gate shadow latches and high-performance transistors is presented that decouples performance from standby power in sub-130-nm technologies. Circuit design and operation, including pulse-clocked latches, use of dynamic circuits, and inclusion of scan is presented. The approach is validated by experimental results on a 90-nm process.</description><subject>Applied sciences</subject><subject>Batteries</subject><subject>Circuit design</subject><subject>Circuit properties</subject><subject>Circuit synthesis</subject><subject>Circuits</subject><subject>Constraining</subject><subject>Digital circuits</subject><subject>Dynamic voltage scaling</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Energy consumption</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Functional integration</subject><subject>Latches</subject><subject>Leakage current</subject><subject>Leakage currents</subject><subject>logic circuits</subject><subject>low power</subject><subject>Power consumption</subject><subject>Power supplies</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>sequential logic circuits</subject><subject>Shadows</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Tunneling</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kM9LwzAUx4MoOKd3wUsR1FNn0qTtC57G8CcDD1PwFtI0mR1dM5OWsf_elA4GHrwkvLzP-z7yQeiS4AkhmN-_LRazSYIxmwDDHPIjNCJpCjHJ6dcxGmFMIOahf4rOvF-FkjEgI_Qwt9vIt7Ipi120sVvt-qrV4bROLnVkbHjpiphQHDfrqNXqu7G1XVban6MTI2uvL_b3GH0-PX7MXuL5-_PrbDqPFQXaxlyVZVIqDYoTSUtT5sAoVSC5zApmUpNgVRhDWZpArnKFC5oQzKCQeSHTPKNjdDfkbpz96bRvxbrySte1bLTtvACeJZQAZoG8_ZdMAFOeAQTw-g-4sp1rwi8EJ4T3WTxAeICUs947bcTGVWvpdoJg0UsXvXTRSxeD9DBys8-VXsnaONmoyh_msmCdMhK4q4GrtNaHNgXIwuJf8GuJGQ</recordid><startdate>20050201</startdate><enddate>20050201</enddate><creator>Clark, L.T.</creator><creator>Ricci, F.</creator><creator>Biyani, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20050201</creationdate><title>Low standby power state storage for sub-130-nm technologies</title><author>Clark, L.T. ; Ricci, F. ; Biyani, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-9cdd2dce8c91a3dfd78433c8a9a6b4f5f20cbff345287c7c0b321048ba7ba5763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Batteries</topic><topic>Circuit design</topic><topic>Circuit properties</topic><topic>Circuit synthesis</topic><topic>Circuits</topic><topic>Constraining</topic><topic>Digital circuits</topic><topic>Dynamic voltage scaling</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Energy consumption</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>Functional integration</topic><topic>Latches</topic><topic>Leakage current</topic><topic>Leakage currents</topic><topic>logic circuits</topic><topic>low power</topic><topic>Power consumption</topic><topic>Power supplies</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>sequential logic circuits</topic><topic>Shadows</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Clark, L.T.</creatorcontrib><creatorcontrib>Ricci, F.</creatorcontrib><creatorcontrib>Biyani, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Clark, L.T.</au><au>Ricci, F.</au><au>Biyani, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low standby power state storage for sub-130-nm technologies</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2005-02-01</date><risdate>2005</risdate><volume>40</volume><issue>2</issue><spage>498</spage><epage>506</epage><pages>498-506</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>Handheld and other battery-powered ICs require process scaling to increase functional integration and reduce active power consumption. Scaling also increases leakage current components to the point where standby power is frequently a limiting design factor. A scheme combining low-leakage thick-gate shadow latches and high-performance transistors is presented that decouples performance from standby power in sub-130-nm technologies. Circuit design and operation, including pulse-clocked latches, use of dynamic circuits, and inclusion of scan is presented. The approach is validated by experimental results on a 90-nm process.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2004.840987</doi><tpages>9</tpages></addata></record> |
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ispartof | IEEE journal of solid-state circuits, 2005-02, Vol.40 (2), p.498-506 |
issn | 0018-9200 1558-173X |
language | eng |
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source | IEEE Electronic Library (IEL) Journals |
subjects | Applied sciences Batteries Circuit design Circuit properties Circuit synthesis Circuits Constraining Digital circuits Dynamic voltage scaling Electric, optical and optoelectronic circuits Electronic circuits Electronics Energy consumption Exact sciences and technology Frequency Functional integration Latches Leakage current Leakage currents logic circuits low power Power consumption Power supplies Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices sequential logic circuits Shadows Threshold voltage Transistors Tunneling |
title | Low standby power state storage for sub-130-nm technologies |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T10%3A22%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low%20standby%20power%20state%20storage%20for%20sub-130-nm%20technologies&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Clark,%20L.T.&rft.date=2005-02-01&rft.volume=40&rft.issue=2&rft.spage=498&rft.epage=506&rft.pages=498-506&rft.issn=0018-9200&rft.eissn=1558-173X&rft.coden=IJSCBC&rft_id=info:doi/10.1109/JSSC.2004.840987&rft_dat=%3Cproquest_pasca%3E2543188301%3C/proquest_pasca%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c383t-9cdd2dce8c91a3dfd78433c8a9a6b4f5f20cbff345287c7c0b321048ba7ba5763%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=911980439&rft_id=info:pmid/&rft_ieee_id=1388639&rfr_iscdi=true |