Significance of Strike Model in Circuit-Level Prediction of Charge Sharing Upsets

When evaluating sub-100 nm circuits for hardness to Single Event Transients (SETs), the choice of strike model is shown to have a notable effect upon observed upsets. A method utilizing distributed charges to model strikes to adjacent devices is illustrated and utilized to compare the effect of stri...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2009-12, Vol.56 (6), p.3109-3114
Main Authors: Francis, A.M., Dimitrov, D., Kauppila, J., Sternberg, A., Alles, M., Holmes, J., Mantooth, H.A.
Format: Article
Language:English
Subjects:
Charge
Charge sharing
Circuit simulation
Circuits
Computational modeling
Computer aided design
Computer simulation
Context modeling
Hardness
Integrated circuit modeling
Kernel
Kernels
Mathematical models
Physics computing
Predictive models
Radiation hardening
radiation hardening by design (RHBD)
radiation hardness assurance methodology
single event effects
single event transients (SETs)
SPICE
Strikes
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Summary:When evaluating sub-100 nm circuits for hardness to Single Event Transients (SETs), the choice of strike model is shown to have a notable effect upon observed upsets. A method utilizing distributed charges to model strikes to adjacent devices is illustrated and utilized to compare the effect of strike kernel models in such Charge Sharing SETS (CSSETS). Bias-dependent models are shown to more accurately predict expected physical observations and Technology Computer Aided Design (TCAD) simulation, especially when such charge-sharing upsets must be considered.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2009.2032912