A 0.65-V 2.5-GHz Fractional-N Synthesizer With Two-Point 2-Mb/s GFSK Data Modulation

We present ultra-low-voltage circuit design techniques for a fractional-N RF synthesizer with two-point modulation which was realized in 90-nm CMOS using only regular V T devices.; the voltage controlled oscillator, phase-frequency detector and charge pump operate from a 0.5 V supply while the divid...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2009-09, Vol.44 (9), p.2411-2425
Main Authors: Shih-An Yu, Kinget, P.
Format: Article
Language:English
Subjects:
Applied sciences
Calibration
Charge pumps
Circuit design
Circuit properties
Circuit synthesis
Circuits of signal characteristics conditioning (including delay circuits)
Design. Technologies. Operation analysis. Testing
Detectors
Devices
Digital circuits
Dividers
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Fractional-N
Frequency modulation
frequency synthesis
Frequency synthesizers
GFSK
Integrated circuits
ISM
Modulation
modulator
Oscillators, resonators, synthetizers
Phase detection
Phase frequency detector
Phase modulation
Phase noise
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Synthesizers
ultra-low voltage
voltage-controlled oscillator
Voltage-controlled oscillators
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Description
Summary:We present ultra-low-voltage circuit design techniques for a fractional-N RF synthesizer with two-point modulation which was realized in 90-nm CMOS using only regular V T devices.; the voltage controlled oscillator, phase-frequency detector and charge pump operate from a 0.5 V supply while the divider uses a 0.65 V supply. The frequency synthesizer achieves a phase noise better than -120 dBc/Hz at 3 MHz, while consuming 6 mW. A calibration technique to equalize the gain between the two modulation ports is introduced and enables phase/frequency modulation beyond the loop bandwidth of the phase-locked loop. Measurement results for 2-Mb/s GFSK modulation are presented.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2009.2023156